vs-st650c..l series www.vishay.com vishay semiconductors revision: 21-sep-17 1 document number: 93738 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 phase control thyristors (hockey puk version), 790 a features ? center amplifying gate ? metal case with ceramic insulator ? international standard case b-puk (to-200ac) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ? dc motor control ? controlled dc power supplies ? ac controllers ? ? ? ? ? ? ? ? ? ? electrical specifications primary characteristics i t(av) 790 a v drm /v rrm 2000 v, 2200 v, 2400 v v tm 2.07 v i gt 100 ma t j -40 c to +125 c package b-puk (to-200ac) circuit configuration single scr b-puk (to-200ac) major ratings and characteristics parameter test conditions values units i t(av) 790 a t hs 55 c i t(rms) 1557 a t hs 25 c i tsm 50 hz 10 100 a 60 hz 10 700 i 2 t 50 hz 510 ka 2 s 60 hz 475 v drm /v rrm 2000 to 2400 v t q typical 200 s t j -40 to +125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st650c..l 20 2000 2100 80 22 2200 2300 24 2400 2500
vs-st650c..l series www.vishay.com vishay semiconductors revision: 21-sep-17 2 document number: 93738 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current ? at heatsink temperature i t(av) 180 conduction, half sine wave ? double side (sin gle side) cooled 790 (324) a 55 (85) c maximum rms on-state current i t(rms) dc at 25 c heatsink temp erature double side cooled 1857 a maximum peak, one-cycle ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 10 100 t = 8.3 ms 10 700 t = 10 ms 100 % v rrm reapplied 8600 t = 8.3 ms 9150 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 510 ka 2 s t = 8.3 ms 475 t = 10 ms 100 % v rrm reapplied 370 t = 8.3 ms 347 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 5100 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.04 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.13 low level value of on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.61 m ? high level value of on-state ? slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.35 maximum on-state voltage v tm i pk = 1700 a, t j = t j maximum, t p = 10 ms sine pulse 2.07 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latchi ng current i l 1000 switching parameter symbol test conditions values units maximum non-repe titive rate of ? rise of turned-on current di/dt gate drive 20 v, 20 ? , t r ? 1 s ? t j = t j maximum, anode voltage ? 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s ? v d = 0.67 % v drm , t j = 25 c 1.0 s maximum turn-off time t q i tm = 750 a, t j = t j maximum, di/dt = 60 a/s ? v r = 50, dv/dt = 20 v/s, gate 0 v 100 ? , t p = 500 s 200 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 80 ma
vs-st650c..l series www.vishay.com vishay semiconductors revision: 21-sep-17 3 document number: 93738 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 3.0 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = -40 c maximum required gate trigger/ ? current/voltage are the lowest ? value which will trigger all units 12 v anode to cathode applied 200 - ma t j = 25 c 100 200 t j = 125 c 50 - dc gate voltage required to trigger v gt t j = -40 c 2.5 - v t j = 25 c 1.8 3.0 t j = 125 c 1.1 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistance , junction to heatsink r thj-hs dc operation single side cooled 0.073 k/w dc operation double side cooled 0.031 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.011 dc operation double side cooled 0.006 mounting force, 10 % 14 700 (1500) n (kg) approximate weight 255 g case style see dimensions - link at the end of datasheet b-puk (to-200ac) ? r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.009 0.009 0.006 0.006 t j = t j maximum k/w 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036
vs-st650c..l series www.vishay.com vishay semiconductors revision: 21-sep-17 4 document number: 93738 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ngs characteristics fig. 2 - current rati ngs characteristics fig. 3 - current rati ngs characteristics fig. 4 - current rati ngs characteristics fig. 5 - on-state powe r loss characteristics fig. 6 - on-state powe r loss characteristics 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 400 30 60 90 120 180 av era g e o n-s ta te c urren t (a ) conduction angle maxim um allowable heatsink temperature (c) st 650c ..l se rie s (single side c oo le d) r (d c) = 0 .07 3 k/w th j-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 30 60 90 120 180 av era g e o n-sta te c urre nt (a) conduction angle maximum allowable heatsink temperature (c) st 650c ..l se ries (double side cooled) r (d c ) = 0.0 31 k/w thj-h s 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 30 60 90 120 180 av era g e o n-sta te c urre nt (a) conduction angle maximum allowable heatsink temperature (c) st 650c ..l se ries (double side cooled) r (d c ) = 0.0 31 k/w thj-h s 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 dc 30 60 90 120 180 average o n-state c urrent (a) cond uction period maxim um allow able heatsink tem perature (c) st650c..l series (d ouble side c oole d) r (d c ) = 0.031 k/w th j-hs 0 250 500 750 100 0 125 0 150 0 175 0 200 0 0 100 200 300 400 500 600 700 800 rms lim it conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) st650c..l series t = 125c j 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 200 400 600 800 1000 1200 1400 dc 180 120 90 60 30 rms lim it conduction period m axim um average on-state pow er loss (w) a ve ra g e o n -sta te c urre nt (a) st650c ..l series t = 125c j
vs-st650c..l series www.vishay.com vishay semiconductors revision: 21-sep-17 5 document number: 93738 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - maximum non-re petitive surge current single and double side cooled fig. 8 - maximum non-re petitive surge current single and doub le side cooled fig. 9 - on-state voltag e drop characteristics fig. 10 - thermal impedance z thj-hs characteristics 4000 5000 6000 7000 8000 9000 100 00 0 0 1 0 1 1 number o f equal amp litud e h alf cycle current pulses (n) pea k half sine w ave on-state current (a) a t any r ated loa d c ond itio n an d w ith r a t e d v a p p l ie d f o llo w in g s u rg e . rr m initia l t = 12 5c @ 60 hz 0 .0083 s @ 50 hz 0 .0100 s j st650 c..l s erie s 400 0 500 0 600 0 700 0 800 0 900 0 10000 11000 12000 1 1 . 0 1 0 . 0 peak half sine w ave o n-state c urrent (a) pulse train duration (s) m a x im um n o n re p etitive s urg e c urre nt ve rsus p ulse tra in d ura tion . c o ntrol o f c onduction m ay not be m aintained. in i t ia l t = 1 2 5 c n o v o l t a g e r e a p p l ie d rate d v re applied rrm j st650c..l series 100 1000 10000 0. 5 1 1.5 2 2.5 3 instantaneous on-state current (a) instan tan eous o n -stat e v oltage (v ) st650c..l series t = 25c j t = 125c j 0.001 0.01 0.1 0 1 1 1 . 0 1 0 . 0 1 0 0 . 0 square wave pulse duration (s) thj- hs stea d y sta te va lue r = 0.073 k/w (sin gle side c oo le d) r = 0.031 k/w (do uble side coo led) (dc operatio n) thj-hs thj-hs transie nt th erm al im pe danc e z (k/w ) st650c ..l se ries
vs-st650c..l series www.vishay.com vishay semiconductors revision: 21-sep-17 6 document number: 93738 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vg d ig d (b) (a) tj = 25 c tj=125 c tj=-40 c (2) (3) insta ntan eo us g a te c urren t (a) in sta nt an e ous g a te v olta g e (v ) a) recom mended load line for b ) re c o m m e n d e d lo a d lin e fo r <=30% rated di/dt : 10v, 10ohm s frequency limited by pg(av) rated di/dt : 20v, 10ohm s; tr<=1 s tr<=1 s (1) (1) pg m = 10w , tp = 4m s (2) pg m = 20w , tp = 2m s (3) pg m = 40w , tp = 1m s (4) pg m = 60w , tp = 0.66m s rectangular gate pulse st6 50c..l se rie s (4) - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 9 - critical dv/dt: 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - l = puk case b-puk (to-200ac) 7 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) none = 500 v/s (standard selection) l = 1000 v/s (special selection) device code 5 1 3 2 4 6 7 8 9 st vs- 65 0 c 24 l 1 - 1 - vishay semiconductors product links to related documents dimensions www.vishay.com/doc?95076
outline dimensions www.vishay.com vishay semiconductors revision: 12-jul-17 1 document number: 95076 for technical questions within your region: diodesamericass@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 b-puk (to-200ac) dimensions in millimeters (inches) pin receptacle amp. 60598-1 0.7 (0.03) min. 34 (1.34) dia. max. 2 places 53 (2.09) dia. max. 58.5 (2.3) dia. max. 2 holes dia. 3.5 (0.14) x 2.5 (0.1) deep 4.7 (0.18) 27 (1.06) max. 0.7 (0.03) min. 6.2 (0.24) min. 36.5 (1.44) creepage distance: 36.33 (1.430) minimum strike distance: 17.43 (0.686) minimum quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) 20 5 c a note: a = anode c = cathode
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